Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Audrey Gilbert (1, 2) , Michel Ramonda (1, 2) , Laurent Cerutti (1, 2) , Charles Cornet (3) , Gilles Patriarche (4) , Éric Tournié (1, 2, 5) , Jean‐baptiste Rodriguez (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
4 C2N - Centre de Nanosciences et de Nanotechnologies
5 MAT - Matériaux

This work reports on the precise control of III-V semiconductors' antiphase domain formation and evolution during the epitaxial growth on an "on-axis" Si (001) substrate with a very low but controlled miscut. Especially, it is shown how, starting from a Si surface having a regular array of terraces, the crystal polarity of thin GaAs epilayers grown by molecular-beam epitaxy is defined through the Si surface topology, leading to a quasi-periodic 1D pattern of antiphase domains in the GaAs layer. Furthermore, this work demonstrates how this configuration breaks the symmetry between the two different III-V phases, without any step-flow-induced asymmetry. Following this strategy, an early burying of antiphase domains is demonstrated in GaAs epitaxially grown on a low-miscut Si substrate. This study generalizes previous models describing antiphase domain formation and evolution and establishes the important growth parameters for the development of high crystal quality III-V semiconductor devices monolithically integrated on low-miscut silicon substrates.

Mots clés: Semiconductor; III-V on Si; Molecular beam epitaxy; Gallium Arsenide; Antiphase domains

Domaines: Sciences de l'ingénieur [physics]; Optique / photonique

Audrey Gilbert, Michel Ramonda, Laurent Cerutti, Charles Cornet, Gilles Patriarche, et al.. Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying. Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩. ⟨hal-04107444⟩