New Noise Cancellation Topology in Common-gate LNAs

Masoumeh Sabzi (1, 2) , Mahmoud Kamarei (1) , Tchanguiz Razban (2) , Yann Mahé (2)

1 University of Tehran
2 IETR - Institut d'Électronique et des Technologies du numéRique

In this paper a new approach for designing noise canceling common gate (CG) low noise amplifiers (LNAs) isproposed. This method investigates using inductively degenerated common source (IDCS) stage in parallel with CGstage instead of common source(CS) stage. Considering special specification of IDCS LNA, proposed topology canachieve lower noise figure (NF) and better input impedance matching. Analytical calculation for this topology isperformed and the equations to satisfy input impedance matching along with noise cancellation condition arepresented. The NF of proposed LNA is also calculated while satisfying these conditions by using the calculation ofeach noise source's transfer function. To validate theoretical analysis, two different LNAs in X band are designed andoptimized. The simulations are performed using Advanced Design System (ADS) electromagnetic momentum withGaAS pHEMT 0.1$\mu$m process model. The results shows the proposed method can achieve better inputimpedance matching and lower NF while the output impedance matching and gain have relatively the same behavior.

Mots clés: Low noise Amplifier (LNA); Inductively degenerated common source (IDCS); Common Gate Amplifier; Noise figure (NF); Noise Cancellation

Domaines: Electronique; Autre

Masoumeh Sabzi, Mahmoud Kamarei, Tchanguiz Razban, Yann Mahé. New Noise Cancellation Topology in Common-gate LNAs. Microelectronics Journal, 2020, 100, pp.104800. ⟨10.1016/j.mejo.2020.104800⟩. ⟨hal-02549601⟩