Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges

Abstract : We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the e ects of the monolayer position and the well thickness on the interband and intersubband transitions, based on the extended-basis sp3d5s* tight-binding model, is presented. The e ect of insertion on the interband transitions is compared with existing experimental data. As for intersubband transitions, we show that in a GaAs/AlGaAs quantum well including two AlAs and one InAs insertions, a three level {e1,e2,e3} system where the transition energy e3-e2 is lower and the transition energy e2-e1 larger than the longitudinal optical phonon energy (36 meV) can be engineered together with a e3-e2 transition energy widely tunable through the TeraHertz range.
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Solid State Communications, Elsevier, 2016, 236, pp.7-11. 〈10.1016/j.ssc.2016.03.007〉
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https://hal-insa-rennes.archives-ouvertes.fr/hal-01337261
Contributeur : Soline Boyer <>
Soumis le : vendredi 24 juin 2016 - 17:23:32
Dernière modification le : mercredi 16 mai 2018 - 11:24:05

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F. Raouafi, R. Samti, R. Benchamekh, R. Heyd, S. Boyer-Richard, et al.. Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges. Solid State Communications, Elsevier, 2016, 236, pp.7-11. 〈10.1016/j.ssc.2016.03.007〉. 〈hal-01337261〉

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